Photodetector and manufacture method thereof, touch substrate and display panel
US11217614B2 · kind B2 · utility
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2References
20Claims
0Family size
Assignee
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Key dates
| Filing date | May 11, 2018 |
| Grant date | Jan 4, 2022 |
| Priority date | — |
| Expiry date | Oct 13, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2203/04103
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A photodetector and a manufacture method thereof, a touch substrate and a display panel are provided. The photodetector includes: a substrate; a polysilicon layer on the substrate including a first doped region and a second doped region; a transparent conductive film covering the first doped region of the polysilicon layer; and a metal electrode on the second doped region of the polysilicon layer. The conductive film, the metal electrode and the polysilicon layer constitute a photosensitive device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.