Dielectric, capacitor including dielectric, semiconductor device including dielectric, and method of manufacturing dielectric
US11217660B2 · kind B2 · utility
0Cited by
6References
17Claims
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Key dates
| Filing date | Apr 20, 2020 |
| Grant date | Jan 4, 2022 |
| Priority date | — |
| Expiry date | Apr 20, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/96
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided are a dielectric including an oxide represented by Formula 1 below and having a cubic crystal structure, a capacitor including the dielectric, a semiconductor device including the dielectric, and a method of manufacturing the dielectric. (RbxA1-x)(ByTa1-y)O3-δ <Formula 1>In Formula 1 above, A is K, Na, Li, Cs, or a combination thereof, B is Nb, V, or a combination thereof, and 0.1≤x≤0.2, 0≤y≤0.2, and 0≤δ≤0.5 are satisfied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.