Semiconductor substrate and method for producing same, substrate, and laminate
US11217739B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2018 |
| Grant date | Jan 4, 2022 |
| Priority date | — |
| Expiry date | Jun 7, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N10/857
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A semiconductor substrate contains a clathrate compound of the following General Formula (I). The semiconductor substrate includes a variable-composition layer which includes a pn junction and where composition of the clathrate compound varies along a thickness direction. A rate of change in y in the thickness direction of at least a portion of the variable-composition layer is 1×10−4/μm or more. AxByC46-y (I)In General Formula (I), A represents at least one element selected from the group consisting of Ba, Na, Sr, and K, B represents at least one element selected from the group consisting of Au, Ag, Cu, Ni, and Al, and C represents at least one element selected from the group consisting of Si, Ge, and Sn, x is 7 to 9, and y is 3.5 to 6 or 11 to 17.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.