Crystal control and stability for high-performance perovskite solar cell

US11217751B2 · kind B2 · utility

Assignee

• The Hong Kong Polytechnic University · CN

Inventors

• Wallace Woon-Fong Leung · Hong Kong, CN
• Jingchuan Wang · Sha Tin, CN
• Lijun Yang · Sha Tin, CN

Key dates

• Filing date: Apr 2, 2015
• Grant date: Jan 4, 2022
• Expiry date: Jul 10, 2035

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/549

Abstract

PbI2 thin film crystallization control is prerequisite of high-quality perovskite layer for the sequentially solution-processed perovskite solar cells. According to the present invention, an efficient-and-simple method has been developed by adding halogen acid additive to improve perovskite thin-film quality and an efficiency of at least 15.2% is obtained. This approach improves coverage, uniformity and stability of pervoskite thin-film. In addition, a nanofiber scaffold is incorporated into the perovskite layer so as to reduce the amount of grain boundaries, thus substantially reducing electron recombination within these boundaries.