Formation of carbon nanotube-containing devices
US11217753B2 · kind B2 · utility
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3Claims
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Key dates
| Filing date | Feb 1, 2019 |
| Grant date | Jan 4, 2022 |
| Priority date | — |
| Expiry date | Feb 1, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/00
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method of fabricating a carbon nanotube based device, including forming a trench having a bottom surface and sidewalls on a substrate, selectively depositing a bifunctional compound having two reactive moieties in the trench, wherein a first of the two reactive moieties selectively binds to the bottom surface, converting a second of the two reactive moieties to a diazonium salt; and reacting the diazonium salt with a dispersion of carbon nanotubes to form a carbon nanotube layer bound to the bottom surface of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.