Patent · US Active

Silicon cavity backed radiator structure

US11217874B2 · kind B2 · utility

0Cited by

4References

27Claims

0Family size

Assignee

Analog Devices, Inc. · US

Inventors

Ed Balboni · Littleton, US
Ozan Gurbuz · Portland, US

Key dates

Filing date	Mar 18, 2020
Grant date	Jan 4, 2022
Priority date	—
Expiry date	Mar 18, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01Q9/16
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

One embodiment is an apparatus comprising a silicon-on-insulator (“SOI”) substrate comprising an insulating layer sandwiched in between a bottom silicon layer and a top silicon layer; a radiating element disposed on a top surface of the SOI substrate; and at least one cavity disposed in the SOI substrate surrounding the radiating element, wherein the at least one cavity extends from a bottom surface of the bottom silicon layer to a bottom surface of the insulating layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.