Radiation device
US11217884B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jun 18, 2020 |
| Grant date | Jan 4, 2022 |
| Priority date | — |
| Expiry date | Jun 18, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03C7/02
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A radiation device includes: a first substrate; a second substrate; a dielectric layer disposed between the first substrate and the second substrate; and a film layer structure disposed on the first substrate. The resistivity of the film layer structure is between 108 and 5×1014 Ω-cm. Therefore, frequency modulation range of radiation signals of the radiation device can be increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.