Acoustic wave device
US11218130B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2019 |
| Grant date | Jan 4, 2022 |
| Priority date | — |
| Expiry date | Mar 8, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/175
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An acoustic wave device includes a support substrate having a central region and a surrounding region located around the central region, a silicon oxide film that is located in the central region directly or indirectly and that has a side surface, a piezoelectric layer that is provided on the silicon oxide film and that has a first principal surface and a second principal surface, an excitation electrode provided on at least one of the first principal surface and the second principal surface, a cover film provided to cover the entire side surface of the silicon oxide film, a resin layer that is provided in the surrounding region and that is provided to cover the side surface of the silicon oxide film from above the cover film, and a wiring electrode that is electrically connected to the excitation electrode and that extends from the piezoelectric layer to the resin layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.