Patent · US Active

Reduced MEMS cavity gap

US11220423B2 · kind B2 · utility

0Cited by
3References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 9, 2019
Grant dateJan 11, 2022
Priority date
Expiry dateMay 9, 2039

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81C2203/036
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

Provided herein is a method including forming a MEMS cap. A cavity is formed in the MEMS cap wafer, and a bond material is deposited on the MEMS cap wafer, wherein the bond material lines the cavity after the depositing. The MEMS cap wafer is bonded to a MEMS device wafer, wherein the bond material forms a bond between the MEMS cap wafer and the MEMS device wafer. A MEMS device is formed in the MEMS device wafer. The bond material is removed from the cavity.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.