Methods for increasing aspect ratios in comb structures
US11220424B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2019 |
| Grant date | Jan 11, 2022 |
| Priority date | — |
| Expiry date | Oct 19, 2039 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/031
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method comprises: patterning a substrate, including a conductive region, with photoresist exposed by lithography, where the substrate is mounted on a handle substrate; forming a comb structure with conductive fingers on the substrate by at least removing a portion of the conductive region of the substrate; removing the photoresist; forming, one atomic layer at a time, at least one atomic layer of at least one conductor over at least one sidewall of each conductive finger; attaching at least one insulator layer to the comb structure, and the substrate from which the comb structure is formed; and removing the handle substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.