Microelectromechanical force sensor having a strain transfer layer arranged on the sensor die
US11221263B2 · kind B2 · utility
3Cited by
163References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2018 |
| Grant date | Jan 11, 2022 |
| Priority date | — |
| Expiry date | Jul 19, 2038 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2201/0264
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor including a sensor die and a strain transfer layer. The MEMS force sensor employs piezoresistive or piezoelectric strain gauges for strain sensing where the strain is transferred through the strain transfer layer, which is disposed on the top or bottom side of the sensor die. In the case of the top side strain transfer layer, the MEMS force sensor includes mechanical anchors. In the case of the bottom side strain transfer layer, the protection layer is added on the top side of the sensor die for bond wire protection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.