Patent · US Active

Sub-threshold addressing and erasing in a magneto-electrophoretic writing medium

US11221685B2 · kind B2 · utility

2Cited by
50References
23Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 19, 2019
Grant dateJan 11, 2022
Priority date
Expiry dateDec 19, 2039

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06F3/0383
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A magneto-electrophoretic medium that can be globally and locally addressed and erased. The medium provides a writeable display with no perceivable lag and the ability to write and erase with only minimal power requirements. In particular, the magneto-electrophoretic medium can be erased by providing a subthreshold electric stimulus and supplementing a second non-electric stimulus that disturbs the written state and allows the magneto-electrophoretic particles to return to their original state.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.