Etching apparatus and methods of cleaning thereof
US11222805B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2020 |
| Grant date | Jan 11, 2022 |
| Priority date | — |
| Expiry date | Apr 1, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/182
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for cleaning debris and contamination from an etching apparatus is provided. The etching apparatus includes a process chamber, a source of radio frequency power, an electrostatic chuck within the process chamber, a chuck electrode, and a source of DC power connected to the chuck electrode. The method of cleaning includes placing a substrate on a surface of the electrostatic chuck, applying a plasma to the substrate, thereby creating a positively charged surface on the surface of the substrate, applying a negative voltage or a radio frequency pulse to the electrode chuck, thereby making debris particles and/or contaminants from the surface of the electrostatic chuck negatively charged and causing them to attach to the positively charged surface of the substrate, and removing the substrate from the etching apparatus thereby removing the debris particles and/or contaminants from the etching apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.