Anti-static metal oxide semiconductor field effect transistor structure
US11222888B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 5, 2019 |
| Grant date | Jan 11, 2022 |
| Priority date | — |
| Expiry date | Mar 5, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/401
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An anti-static metal oxide semiconductor field effect transistor structure includes an anti-static body structure and a slave metal oxide semiconductor field effect transistor, the anti-static body structure includes: a main metal oxide semiconductor field effect transistor; a first silicon controlled rectifier, an anode thereof being connected to a drain of the main metal oxide semiconductor field effect transistor, a cathode and a control electrode thereof being connected to a source of the main metal oxide semiconductor field effect transistor; and a second silicon controlled rectifier, an anode thereof being connected to the drain of the main metal oxide semiconductor field effect transistor, a cathode thereof being connected to a gate of the main metal oxide semiconductor field effect transistor, a control electrode thereof being connected to the source or the gate of the main metal oxide semiconductor field effect transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.