Imaging element, stacked type imaging element and solid-state imaging apparatus
US11222912B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2017 |
| Grant date | Jan 11, 2022 |
| Priority date | — |
| Expiry date | Nov 14, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Provided is an imaging element including a photoelectric conversion unit formed by stacking a first electrode, a photoelectric conversion layer and a second electrode. The photoelectric conversion unit further includes a charge storage electrode which is disposed to be spaced apart from the first electrode and disposed opposite to the photoelectric conversion layer via an insulating layer. The photoelectric conversion unit is formed of N number of photoelectric conversion unit segments, and the same applies to the photoelectric conversion layer, the insulating layer and the charge storage electrode. An nth photoelectric conversion unit segment is formed of an nth charge storage electrode segment, an nth insulating layer segment and an nth photoelectric conversion layer segment. As n increases, the nth photoelectric conversion unit segment is located farther from the first electrode. A thickness of the insulating layer segment gradually changes from a first to Nth photoelectric conversion unit segment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.