Patent · US Active

Solid-state imaging device

US11222916B2 · kind B2 · utility

5Cited by

0References

6Claims

0Family size

Assignee

SONY SEMICONDUCTOR SOLUTIONS CORPORATION · JP

Inventors

Kenji Kobayashi · Osaka, JP
Toshifumi Wakano · Yokohama, JP
Yusuke Otake · Yokohama, JP

Key dates

Filing date	Feb 27, 2020
Grant date	Jan 11, 2022
Priority date	—
Expiry date	Feb 27, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10F30/225
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An imaging device includes a first chip. The first chip includes a first pixel and a second pixel. The first pixel includes a first anode region and a first cathode region, and the second pixel includes a second anode region and a second cathode region. The first chip includes a first wiring layer. The first wiring layer includes a first anode electrode, a first anode via coupled to the first anode electrode and the first anode region, and a second anode via coupled to the first anode electrode and the second anode region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.