Image sensor
US11222918B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 2021 |
| Grant date | Jan 11, 2022 |
| Priority date | — |
| Expiry date | May 14, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor comprising a substrate including an upper surface and a lower surface opposite each other and extending in a first direction and a second direction, a first isolation region in the substrate and apart from the upper surface in a third direction perpendicular to the first direction and second direction, the first isolation region defining a boundary of a photoelectric conversion region, a second isolation region in the substrate and extending in the third direction from the lower surface to the first isolation region, a plurality of transistors on the upper surface in the photoelectric conversion region, and a photoelectric conversion device in the substrate in the photoelectric conversion region. The first isolation region includes a potential well doped with an impurity of a first conductivity type, and the second isolation region includes an insulating material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.