Distributed current low-resistance diamond ohmic contacts
US11222956B2 · kind B2 · utility
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7References
7Claims
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Key dates
| Filing date | Apr 9, 2020 |
| Grant date | Jan 11, 2022 |
| Priority date | — |
| Expiry date | Apr 9, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In some embodiments, a semiconductor structure can include: a diamond substrate having a surface conductive layer; a heavily doped region formed in the diamond substrate; and a metal contact positioned over the conductive surface layer such that a first portion of the heavily doped region is covered by the metal contact and a second portion of the heavily doped region is not covered by the metal contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.