Heterojunction transistor with vertical structure

US11222967B2 · kind B2 · utility

Assignees

• COMMISSARIAT A L'ENERGIE ATOMIQUE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR
• Renault S.A.S. · FR

Inventors

• Rene Escoffier · Mauzac, FR
• Serge Loudot · Gif-sur-Yvette, FR

Key dates

• Filing date: Nov 14, 2017
• Grant date: Jan 11, 2022
• Expiry date: May 31, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/513

Abstract

The invention concerns a heterojunction field-effect transistor comprising a stack of first and second III-N type semiconducting layers forming an electron gas or hole layer; a first conduction electrode in electrical contact with the gas layer and a second conduction electrode; a separation layer positioned vertically in line with the first electrode and under the second semiconducting layer; a third semiconducting layer arranged under the separation layer and in electrical contact with the second electrode; a conductive element in electrical contact with the gas layer and electrically connecting the third semiconducting layer and the gas layer; and a control gate positioned between the conductive element and the first conduction electrode.