Silicon carbide semiconductor device integrating clamper circuit for clamping voltage
US11222971B2 · kind B2 · utility
0Cited by
6References
10Claims
0Family size
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Key dates
| Filing date | Nov 20, 2019 |
| Grant date | Jan 11, 2022 |
| Priority date | — |
| Expiry date | Apr 23, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/611
Abstract
The present invention provides a silicon carbide (SiC) semiconductor device integrating a metal-oxide-semiconductor field-effect transistor (MOSFET) and a bidirectional voltage clamping circuit. An object of protecting a device is achieved by using the simple structure above, effectively preventing device damage that may be caused by a positive overvoltage and a negative overvoltage between a gate and a source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.