Conductive bridge semiconductor component and manufacturing method therefor

US11223013B2 · kind B2 · utility

Assignee

• INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Qi Liu · New Taipei, TW
• Xiaolong ZHAO · Beijing, CN
• Sen-You Liu · Taipei, TW
• Ming Liu · Beijing, CN
• Hangbing Lv · Beijing, CN
• Shibing Long · Beijing, CN
• Yan Wang · Nanjing, CN
• Facai Wu · Beijing, CN

Key dates

• Filing date: Feb 28, 2017
• Grant date: Jan 11, 2022
• Expiry date: Jul 4, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

The present disclosure provides a conductive bridge semiconductor device and a method of manufacturing the same. The conductive bridge semiconductor device includes a lower electrode, a resistive switching functional layer, an ion barrier layer and an active upper electrode from bottom to top, wherein the ion barrier layer is provided with certain holes through which active conductive ions pass. Based on this structure, the precise designing of the holes on the barrier layer facilitates the modulation of the quantity, size and density of the conduction paths in the conductive bridge semiconductor device, which enables that the conductive bridge semiconductor device can be modulated to be a nonvolatile conductive bridge resistive random access memory or a volatile conductive bridge selector. Based on the above method, ultra-low power nonvolatile conductive bridge memory and high driving-current volatile conductive bridge selector with controllable polarity are completed.