Mn—Zn—O sputtering target and production method therefor
US11225709B2 · kind B2 · utility
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3Claims
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Key dates
| Filing date | Jul 11, 2017 |
| Grant date | Jan 18, 2022 |
| Priority date | — |
| Expiry date | Sep 19, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/963
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided are a Mn—Zn—O sputtering target that can be used for DC sputtering and a production method therefor. The Mn—Zn—O sputtering target has a chemical composition containing Mn, Zn, O, and an element X (X is one or two elements selected from the group consisting of W and Mo). A surface to be sputtered of the target has an arithmetic mean roughness Ra of 1.5 μm or less or a maximum height Ry of 10 μm or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.