Thin film etchant composition and method of forming metal pattern by using the same
US11225721B2 · kind B2 · utility
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Key dates
| Filing date | Feb 25, 2019 |
| Grant date | Jan 18, 2022 |
| Priority date | — |
| Expiry date | Feb 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/621
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film etchant composition for preventing re-adsorption of an etched metal and uniformly etching a thin film is provided. The thin film etchant composition includes about 43 wt % to about 46 wt % of phosphoric acid, about 5 wt % to about 8 wt % of nitric acid, about 10 wt % to about 17 wt % of acetic acid, about 1 wt % to about 3 wt % of iron nitrate, about 0.7 wt % to about 1.5 wt % of phosphate, and deionized water as a remaining amount based on a total weight of the thin film etchant composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.