Etch process with rotatable shower head
US11227747B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2019 |
| Grant date | Jan 18, 2022 |
| Priority date | — |
| Expiry date | Jan 4, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6831
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present disclosure describes an exemplary etch process in a reactor that includes a shower head and an electrostatic chuck configured to receive a radio frequency (RF) power. The shower head includes a top plate and a bottom plate with one or more gas channels that receive incoming gases. The method can include (i) rotating the top plate or the bottom plate of the shower head to a first position to allow a gas to flow through the shower head; (ii) performing a surface modification cycle that includes: applying a negative direct current (DC) bias voltage to the shower head, applying an RF power signal to the wafer chuck; and (iii) performing an etching cycle that includes: removing the negative DC bias voltage from the shower head and lowering the RF power signal applied to the wafer chuck.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.