Etching method
US11227771B2 · kind B2 · utility
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Key dates
| Filing date | Oct 26, 2017 |
| Grant date | Jan 18, 2022 |
| Priority date | — |
| Expiry date | Oct 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68764
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching method for etching a substrate using a molten alkali, wherein, while an oxide coating is formed on the surface of the substrate PL to be etched in a high-temperature oxygen-containing environment, the surface to be etched is isotropically etched to remove the oxide coating using a molten alkali AL brought into a prescribed high-temperature range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.