Gallium nitride electromagnetic pulse arrestor
US11227844B1 · kind B1 · utility
0Cited by
1References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2019 |
| Grant date | Jan 18, 2022 |
| Priority date | — |
| Expiry date | Oct 1, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A GaN diode EMP arrestor exhibits breakdown in <10 ns at reverse-bias voltage >20 kV. Additionally, the arrestor exhibits avalanche ruggedness at 1 kA/cm2 in a 1 mm2 device (i.e. 10 A absolute current) over a period of 500 ns following the onset of breakdown. Finally, the specific on-resistance in the forward direction is <20 mΩ cm2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.