Thin-film transistor and method for manufacturing same, array substrate, and display device
US11227881B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Jul 6, 2018 |
| Grant date | Jan 18, 2022 |
| Priority date | — |
| Expiry date | Nov 3, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13069
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed in the present invention are a method for manufacturing a thin-film transistor, an array substrate, and a display device. The method includes: forming a buffer layer on a substrate; forming a polysilicon layer on the buffer layer; performing a patterning process on the polysilicon layer, to form an active layer; depositing a gate insulating layer on the active layer; depositing a gate metal layer on the gate insulating layer, and performing dry etching on the gate metal layer by using the patterning process and by using a gas containing CO as an etching gas, to form a gate; performing ion implantation on the active layer by using the gate as a mask, to form a source region and a drain region; and depositing a passivation layer on the gate, forming through holes in the gate insulating layer and the passivation layer, and manufacturing a source and a drain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.