Integrated circuit device and method of manufacturing the same
US11227912B2 · kind B2 · utility
1Cited by
8References
13Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 30, 2019 |
| Grant date | Jan 18, 2022 |
| Priority date | — |
| Expiry date | Jan 9, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/315
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device includes a lower electrode including a niobium (Nb)-containing layer doped with titanium (Ti), a dielectric layer on the lower electrode, and an upper electrode that covers the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.