Patent · US Active

Power semiconductor devices with low specific on-resistance

US11227949B2 · kind B2 · utility

0Cited by

0References

18Claims

0Family size

Assignee

University of Electronic Science and Technology of China · CN

Inventors

Ming Qiao · Chengdu, CN
Longfei Liang · Chengdu, CN
Yilei Lyu · Chengdu, CN
Zhao Qi · Chengdu, CN
Bo Zhang · Shanghai, CN

Key dates

Filing date	May 19, 2020
Grant date	Jan 18, 2022
Priority date	—
Expiry date	Jul 4, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/106
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A low specific on-resistance (Ron,sp) power semiconductor device includes a power device and a transient voltage suppressor (TVS); wherein the power device comprises a gate electrode, a drain electrode, a bulk electrode, a source electrode and a parasitic body diode, the bulk electrode and the source electrode are shorted, the TVS comprises an anode electrode and a cathode electrode, the drain electrode of the power device and the anode electrode of the TVS are connected by a first metal to form a high-voltage terminal electrode, the source electrode of the power device and the cathode electrode of the TVS are connected by a second metal to form a low-voltage terminal electrode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.