Tunneling field effect transistor

US11227953B2 · kind B2 · utility

Assignee

• Japan Science and Technology Agency · JP

Inventors

• Kimihiko Kato · Tokyo, JP
• Shinichi Takagi · Amagasaki, JP
• Mitsuru Takenaka · Tokyo, JP
• Hitoshi Tabata · Suita, JP
• Hiroaki Matsui · Shizuoka, JP

Key dates

• Filing date: Nov 28, 2018
• Grant date: Jan 18, 2022
• Expiry date: Nov 28, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/85

Abstract

A tunneling field effect transistor according to an embodiment of the present invention includes: a first semiconductor layer having a first conductive type; a second semiconductor layer having a second conductive type and realizing a heterojunction with respect to the first semiconductor layer in a first region; a gate insulating layer over the second semiconductor layer in the first region; a gate electrode layer over the gate insulating layer; a first electrode layer electrically connected to the first semiconductor layer; a second electrode layer electrically connected to the second semiconductor layer; and a first insulating layer interposed between the first semiconductor layer and the second semiconductor layer in a second region adjacent to the first region toward the second electrode layer.