Patent · US Active

Marking method

US11227969B2 · kind B2 · utility

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7Claims
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Assignee

Inventors

Key dates

Filing dateAug 31, 2020
Grant dateJan 18, 2022
Priority date
Expiry dateSep 18, 2040

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A marking method for applying a unique identification to each individual solar cell stack of a semiconductor wafer, at least comprising the steps: Providing a semiconductor wafer having an upper side and an underside, which comprises a Ge substrate forming the underside; and generating an identification with a unique topography by means of laser ablation, using a first laser, on a surface area of the underside of each solar cell stack of the semiconductor wafer, the surface area being formed in each case by the Ge substrate or by an insulating layer covering the Ge substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.