Semiconductor device with patterned contact area
US11230470B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 1, 2017 |
| Grant date | Jan 25, 2022 |
| Priority date | — |
| Expiry date | Feb 10, 2038 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C1/00928
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention relates to semiconductor devices, such as microelectromechanical (MEMS) devices, with improved resilience during manufacturing. In one embodiment, a MEMS device includes a MEMS structure; a substrate situated parallel to the MEMS structure and positioned a first distance from the MEMS structure; and a bump stop structure formed on the substrate between the substrate and the MEMS structure, wherein the bump stop structure substantially traces a perimeter of the substrate, wherein the bump stop structure extends from the substrate to a second distance from the MEMS structure, and wherein the second distance is greater than zero and less than the first distance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.