Semiconductor device package comprising thermal interface layer and method of fabricating of the same
US11232996B2 · kind B2 · utility
0Cited by
4References
12Claims
0Family size
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Key dates
| Filing date | Jun 18, 2020 |
| Grant date | Jan 25, 2022 |
| Priority date | — |
| Expiry date | Jun 18, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L24/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device package may comprise providing a semiconductor device, preparing a thermal interface layer on the semiconductor device, and disposing a heat spreader on the thermal interface layer, wherein the thermal interface layer comprises a core shell composite containing a metal core and a carbon shell surrounding the metal core.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.