Patent · US Active

Light emitting diode display substrate, manufacturing method thereof, and display device

US11233038B2 · kind B2 · utility

1Cited by
0References
18Claims
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Key dates

Filing dateOct 20, 2017
Grant dateJan 25, 2022
Priority date
Expiry dateMar 13, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/825
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A light emitting diode display substrate, a manufacturing method thereof, and a display device are provided. The light emitting diode display substrate includes a base substrate; a light emitting diode located on the base substrate, and a self-assembled monolayer. The light emitting diode includes a graphene layer, and the graphene layer is located on a side of the light emitting diode close to the base substrate; the self-assembled monolayer is located between the graphene layer and the base substrate and connected with the graphene layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.