Multi-photo pixel cell having vertical gate structure
US11233085B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 2019 |
| Grant date | Jan 25, 2022 |
| Priority date | — |
| Expiry date | Jul 15, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/20
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An apparatus is provided. The apparatus includes a semiconductor substrate including a first photodiode to generate a first charge, a second photodiode to generate a second charge, a barrier layer between the first photodiode and the second photodiode, wherein the first photodiode, the barrier layer, and the second photodiode form a stack. The apparatus further includes a floating drain and one or more gates including: a first gate portion on the semiconductor substrate and a second gate portion extending from the front side surface through the first photodiode and reaching the barrier layer. The first gate portion is configured to conduct a first signal to control flow of charge from the first photodiode to the floating drain, and the second gate portion is configured to conduct a second signal to control the barrier layer to control the flow of the second charge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.