Integrated circuit device having dielectric layer, and method and apparatus for manufacturing the integrated circuit device
US11233118B2 · kind B2 · utility
1Cited by
9References
20Claims
0Family size
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Key dates
| Filing date | May 1, 2019 |
| Grant date | Jan 25, 2022 |
| Priority date | — |
| Expiry date | Oct 8, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C28/345
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An integrated circuit (IC) device includes an electrode, a dielectric layer facing the electrode, and a plurality of interface layers interposed between the electrode and the dielectric layer and including a first metal. The plurality of interface layers includes a first interface layer and a second interface layer. An oxygen content of the first interface layer is different from an oxygen content of the second interface layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.