Semiconductor device and method for fabricating the same
US11233150B2 · kind B2 · utility
0Cited by
7References
35Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 24, 2020 |
| Grant date | Jan 25, 2022 |
| Priority date | — |
| Expiry date | Jun 24, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/121
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Example semiconductor devices and methods for fabricating a semiconductor device are disclosed. An example device may include a substrate, a first semiconductor pattern spaced apart from the substrate, a first antioxidant pattern extending along a bottom surface of the first semiconductor pattern and spaced apart from the substrate, and a field insulating film on the substrate. The insulating film may cover at least a part of a side wall of the first semiconductor pattern. The first antioxidant pattern may include a first semiconductor material film doped with a first impurity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.