Semiconductor device

US11233171B2 · kind B2 · utility

Assignee

• Epistar Corporation · TW

Inventors

• Meng-Yang Chen · Hsinchu, TW
• Jung-Jen Li · Hsinchu, TW

Key dates

• Filing date: Dec 27, 2019
• Grant date: Jan 25, 2022
• Expiry date: Apr 8, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/824

Abstract

The present disclosure provides a semiconductor device which includes a base layer and a buffer structure. The base layer includes a first semiconductor compound having a first lattice constant and including a plurality of elements, and an atomic radius of one of the plurality of elements which has the largest atomic radius is defined as a first atomic radius. The buffer structure includes a second semiconductor compound and a first additive. The second semiconductor compound has a second lattice constant and the first additive has a second atomic radius. The second lattice constant is larger than the first lattice constant, and the second atomic radius is larger than the first atomic radius.