Short-circuit protection of power semiconductor device by sensing current injection from drain to gate
US11233504B2 · kind B2 · utility
0Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2019 |
| Grant date | Jan 25, 2022 |
| Priority date | — |
| Expiry date | Oct 9, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0054
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Systems and methods for early-onset electrical fault detection are described in which a rate-of-rise of channel current in a device such as a transistor is sensed, indicating whether an electrical fault is present. In some embodiments, the rate-of-rise of the channel current may be sensed by detecting whether a current flowing away from a control terminal of the device is greater than a threshold level. In the event that an electrical fault is detected, the device may be shut off to prevent damage to the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.