Fully depleted devices with slots in active regions

US11239087B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Heng Yang · Fishkill, US
• David Pritchard · Beacon, US
• George J. Kluth · Hopewell Junction, US
• Anurag Mittal · Saratoga Springs, US
• Hongru Ren · Mechanicville, US
• Manjunatha Prabhu · Malta, US
• Kai Sun · Beijing, CN
• Neha Nayyar · Clifton Park, US
• Lixia Lei · Clifton Park, US

Key dates

• Filing date: Oct 24, 2019
• Grant date: Feb 1, 2022
• Expiry date: Oct 24, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/798
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to devices with slotted active regions and methods of manufacture. The method includes: forming a mandrel on top of a diffusion region comprising a diffusion material; forming a first material over the mandrel and the diffusion region; removing the mandrel to form multiple spacers each having a thickness; depositing a second material over the spacers and the diffusion material; and forming slots in the diffusion region by removing a portion of the second material over the diffusion region and the underlying diffusion material.