Patent · US Active

Array substrate and preparation method thereof

US11239113B2 · kind B2 · utility

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8Claims

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Assignees

Inventors

Wei-Chen Chen · Redmond, US
Zhiqiang Zhang · Hefei, CN
Hanqing LIU · Beijing, CN
Yangheng Li · Beijing, CN
Mingming JIA · Beijing, CN
Xin Li · Suwon-si, KR
Yong Song · Beijing, CN

Key dates

Filing date	Mar 31, 2020
Grant date	Feb 1, 2022
Priority date	—
Expiry date	May 21, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L23/53295
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present disclosure discloses an array substrate and a preparation method thereof. After a first passivation layer is formed, residual gas is directly drawn out of a closed chamber to prevent the residual gas from reacting to form an unstable layer on the first passivation layer. Furthermore, after the residual gas is drawn out, a preset gas fills the closed chamber, and is retained for a preset time period and then drawn out. The retaining of the preset gas can effectively alleviate the damage to the passivation layer by static electricity.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.