Thin film transistor, method for manufacturing thereof and display device

US11239263B2 · kind B2 · utility

Assignee

• BOE Technology Group Co., Ltd. · CN

Inventors

• Tianmin Zhou · Beijing, CN
• Wei Yang · Taipei, TW
• Lizhong Wang · Longbeilingcun, CN
• Xiaming Zhu · Beijing, CN
• Jipeng Song · Beijing, CN

Key dates

• Filing date: Jan 23, 2018
• Grant date: Feb 1, 2022
• Expiry date: Mar 6, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/84

Abstract

A thin film transistor, a method for manufacturing the same and a display device are disclosed. The thin film transistor includes source-drain electrodes and a passivation layer; an isolation layer is disposed between the source-drain electrodes and the passivation layer, and the isolation layer overlays the source-drain electrodes.