Imaging device and method for manufacturing the same
US11239271B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2020 |
| Grant date | Feb 1, 2022 |
| Priority date | — |
| Expiry date | Jul 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/191
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An imaging device includes a plurality of light-receiving elements arranged in a two-dimensional matrix shape. Each of the light-receiving elements includes a first electrode, a photoelectric conversion layer, and a second electrode. The photoelectric conversion layer has a laminated structure in which a first compound semiconductor layer having a first conductivity type and a second compound semiconductor layer having a second conductivity type that is a reverse conductivity type to the first conductivity type are laminated from a side of the first electrode. The second compound semiconductor layer has been removed in a region between the light-receiving elements. The first electrode and the first compound semiconductor layer are shared by the light-receiving elements. An impurity concentration of a first compound semiconductor layer near the first electrode is lower than that of a first compound semiconductor layer near the second compound semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.