Thin film transistor substrate and method of fabricating same

US11239331B2 · kind B2 · utility

Inventors

• Qian Ma · San Diego, US
• Xingyu Zhou · Tangxia, CN

Key dates

• Filing date: Oct 24, 2019
• Grant date: Feb 1, 2022
• Expiry date: May 17, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/673

Abstract

A thin film transistor substrate and a method of fabricating same are provided.The thin film transistor substrate includes a substrate, a light shielding layer disposed on the substrate, a buffer layer disposed on the light shielding layer, an active layer disposed on the buffer layer, and a gate insulating layer disposed on the active layer. The gate insulating layer includes a stacked structure including a first insulating layer and a second insulating layer.