Semiconductor device
US11239357B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 4, 2020 |
| Grant date | Feb 1, 2022 |
| Priority date | — |
| Expiry date | Feb 4, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region, a second semiconductor region, a third semiconductor region, a metal-including portion being conductive, an insulating portion, a gate electrode, a second electrode, a first interconnect layer, and a second interconnect layer. The first semiconductor region is provided on the first electrode. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region and the metal-including portion are provided on portions of the second semiconductor region. The insulating portion is arranged in a second direction with the third semiconductor region, the second semiconductor region, and a portion of the first semiconductor region. The gate electrode and the second electrode are provided inside the insulating portion. The first interconnect layer is electrically connected to the gate electrode. The second interconnect layer is electrically connected to the metal-including portion and the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.