Semiconductor device and method for manufacturing the same

US11239364B2 · kind B2 · utility

Assignee

• Shanghai Huali Integrated Circuit Corporation · CN

Inventors

• Jun Tan · Shanghai, CN
• Qiuming Huang · Shanghai, CN
• Qiang Yan · Shanghai, CN

Key dates

• Filing date: Jun 2, 2020
• Grant date: Feb 1, 2022
• Expiry date: Jun 2, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/693

Abstract

The present disclosure discloses a semiconductor device, which comprises: an embedded gate structure with a bottom embedded in a semiconductor substrate; a channel region formed below the bottom surface of the embedded gate structure; a source region and a drain region formed on the two sides of the embedded gate structure; an embedded epitaxial layer formed in the source region or the drain region, the bottom surface of the embedded gate structure being in flush with the maximum stress position of the embedded epitaxial layer. The present disclosure further discloses a method for manufacturing a semiconductor device. The present disclosure can enable the channel region to be located in the maximum stress region of the embedded epitaxial layer, thereby improving the mobility of channel carriers to the utmost extent and improving the conduction current of the device.