Semiconductor photomultiplier
US11239382B2 · kind B2 · utility
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4References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 5, 2018 |
| Grant date | Feb 1, 2022 |
| Priority date | — |
| Expiry date | Jan 24, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/413
Abstract
A semiconductor photomultiplier includes a microcell, a photosensitive diode, and an anti-reflective coating. The microcell has an insulating layer formed over an active region. The photosensitive diode is formed in the active region beneath the insulating layer. The anti-reflective coating is provided on the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.