Semiconductor device

US11239388B2 · kind B2 · utility

Assignee

• Epistar Corporation · TW

Inventors

• Meng-Yang Chen · Hsinchu, TW
• Jung-Jen Li · Hsinchu, TW

Key dates

• Filing date: Dec 23, 2019
• Grant date: Feb 1, 2022
• Expiry date: Jan 27, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/882

Abstract

A semiconductor device includes a first type semiconductor structure, an active structure, and a contact layer. The first type semiconductor structure includes a first lattice constant, a first side and a second side opposite to the first side. The active structure is on the first side of the first type semiconductor structure and emits a radiation, and the radiation has a peak wavelength between 1000 nm and 2000 nm. The contact layer is on the second side of the first type semiconductor structure and includes a second lattice constant. A difference between the first lattice constant and the second lattice constant is at least 0.5%.