Patent · US Active

Optoelectronic semiconductor chip, high-voltage semiconductor chip and method for producing an optoelectronic semiconductor chip

US11239392B2 · kind B2 · utility

1Cited by

4References

17Claims

0Family size

Assignee

Osram OLED GMBH · DE

Inventors

Fabian Kopp · Bukit Mertajam, MY
Attila Molnar · Vadnais Heights, US

Key dates

Filing date	Jul 16, 2018
Grant date	Feb 1, 2022
Priority date	—
Expiry date	Jul 16, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/032
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An optoelectronic semiconductor chip may include a semiconductor layer sequence having at least one n-doped semiconductor layer, at least one p-doped semiconductor layer, and an active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer. A p-terminal contact may be electrically contacted to the p-doped semiconductor layer. An n-terminal contact may be electrically contacted to the n-doped semiconductor layer. The n-terminal contact may be arranged in direct contact with the p-doped semiconductor layer at least in regions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.