Semiconductor light-emitting device
US11239401B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2020 |
| Grant date | Feb 1, 2022 |
| Priority date | — |
| Expiry date | Jul 20, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/851
Abstract
A semiconductor light-emitting device includes a substrate having a base, a conductive layer and an insulating layer, a semiconductor light-emitting element and a resin member. The base has a pair of base first side surfaces and a pair of base third side surfaces. The conductive layer includes a front-surface segment and a side-surface segment. The front surface segment includes a front-surface first part. The insulating layer includes an insulating-layer first part and an insulating-layer second part. The resin member covers the insulating-layer first part and the insulating-layer second part of the insulating layer. A first thickness of the insulating-layer first part is greater than a second thickness of the insulating-layer second part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.